? 2008 ixys corporation, all rights reserved g = gate d = drain s = source tab = drain trench gate power mosfet n-channel enhancement mode avalanche rated v dss = 150v i d25 = 102a r ds(on) 18m ds99661b(10/08) ixta102n15t ixth102n15t IXTP102N15T ixtq102n15t to-263 (i xta ) to-220 (i xtp ) d (tab) g s to-3p (ixtq) g d s to-247 (ixth) g s (tab) g d s (tab) (tab) symbol test conditions maximum ratings v dss t j = 25 c to 175 c 150 v v dgr t j = 25 c to 175 c r gs = 1m 150 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 102 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 300 a i a t c = 25 c51a e as t c = 25 c 750 mj dv/dt i s i dm , v dd v dss ,t j 175 c 10 v/ns p d t c = 25 c 455 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220, to-3p, to-247) 1.13 / 10 nmlb.in. f c mounting force (to-263) 10..65/2.2..14.6 n/lb. weight to-263 2.5 g to-220 3.0 g to-3p 5.5 g to-247 6.0 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 150 v v gs(th) v ds = v gs , i d = 1ma 3.0 5.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 5 a v gs = 0v t j = 150 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 18 m features z international standard packages z avalanche rated advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications
ixys reserves the right to change limits, test conditions, and dimensions. ixta102n15t ixth102n15t IXTP102N15T ixtq102n15t symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 50 80 s c iss 5220 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 685 pf c rss 95 pf t d(on) 20 ns t r 14 ns t d(off) 25 ns t f 22 ns q g(on) 87 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 23 nc q gd 31 nc r thjc 0.33 c/w r thch (to-220) 0.50 c/w (to-3p & to-247) 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 102 a i sm repetitive, pulse width limited by t jm 400 a v sd i f = 100a, v gs = 0v, note 1 1.3 v t rr 97 ns i rm 8.4 a q rm 409 nc note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 3.3 (external) i f = 51a, -di/dt = 100a/ s v r = 75v, v gs = 0v
? 2008 ixys corporation, all rights reserved ixta102n15t ixth102n15t IXTP102N15T ixtq102n15t to-3p (ixtq) outline to-263 (ixta) outline pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixtp) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 (ixth) outline terminals: 1 - gate 2 - drain 3 - source tab - drain e ? p 1 2 3
ixys reserves the right to change limits, test conditions, and dimensions. ixta102n15t ixth102n15t IXTP102N15T ixtq102n15t fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 110 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7v 6v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 6v 7v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 80 90 100 110 0.00.40.81.21.62.02.42.83.23.64.0 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7 v 5 v 6 v fig. 4. r ds(on) normalized to i d = 51a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 102a i d = 51a fig. 5. r ds(on) normalized to i d = 51a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 40 80 120 160 200 240 280 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
? 2008 ixys corporation, all rights reserved ixta102n15t ixth102n15t IXTP102N15T ixtq102n15t fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 0 20 40 60 80 100 120 140 160 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 25 50 75 100 125 150 175 200 225 250 275 300 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090 q g - nanocoulombs v gs - volts v ds = 75v i d = 51a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1.0 10.0 100.0 1000.0 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse r ds(on) limit 25s 100s 1ms 10ms 100ms dc ixys ref: f_102n15t(6e)90-30-08
ixys reserves the right to change limits, test conditions, and dimensions. ixta102n15t ixth102n15t IXTP102N15T ixtq102n15t fig. 14. resistive turn-on rise time vs. drain current 12 13 14 15 16 17 18 50 55 60 65 70 75 80 85 90 95 100 105 i d - amperes t r - nanoseconds r g = 3.3 ? v gs = 10v v ds = 75v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 10 20 30 40 50 60 70 80 90 100 2 4 6 8 101214161820 r g - ohms t r - nanoseconds 12 14 16 18 20 22 24 26 28 30 32 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 75v i d = 102a i d = 51a fig. 16. resistive turn-off switching times vs. junction temperature 20 21 22 23 24 25 26 27 28 29 30 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 20 22 24 26 28 30 32 34 36 38 40 t d(off) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v gs = 10v v ds = 75v i d = 51a i d = 102a fig. 17. resistive turn-off switching times vs. drain current 20 21 22 23 24 25 26 50 55 60 65 70 75 80 85 90 95 100 105 i d - amperes t f - nanoseconds 18 22 26 30 34 38 42 t d(off) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v gs = 10v v ds = 75v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 10 11 12 13 14 15 16 17 18 19 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 3.3 ? v gs = 10v v ds = 75v i d = 102a i d = 51a fig. 18. resistive turn-off switching times vs. gate resistance 0 40 80 120 160 200 240 280 2 4 6 8 10 12 14 16 18 20 r g - ohms t f - nanoseconds 20 40 60 80 100 120 140 160 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 75v i d = 51a i d = 102a
? 2008 ixys corporation, all rights reserved ixys ref: f_102n15t(6e)90-30-08 ixta102n15t ixth102n15t IXTP102N15T ixtq102n15t fig. 19. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
|
